PART |
Description |
Maker |
EM4269 |
512 bit Read/Write Contactless Identification Device
|
EMMICRO[EM Microelectronic - MARIN SA]
|
EM4569 EM4469 |
512 bit Read/Write Contactless Identification Device
|
EMMICRO[EM Microelectronic - MARIN SA]
|
S29WS128P0PBAW002 S29WS256P0PBAW000 S29WS128P0LBAW |
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 8M X 16 FLASH 1.8V PROM, 80 ns, PBGA84 512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA84 512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
|
Spansion, Inc.
|
AM41DL3248GB85IT AM41DL3238GB85IT AM41DL3238GT85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc. SPANSION LLC
|
CY14B512Q2A-SXIT CY14E512Q CY14C512Q |
512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
|
Cypress Semiconductor
|
AM29DL640G90 AM29DL640G120 AM29DL640G70PCEN AM29DL |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 64兆位米8 4米x 16位).0伏的CMOS只,同步写闪 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 4M X 16 FLASH 3V PROM, 70 ns, PBGA63
|
Advanced Micro Devices, Inc.
|
EM4469V0WT27 EM4469V1WT27 EM4469V2WT27 EM4469V3WT2 |
RES NTWK SMT 1K OHM 5% 1206 4 RES ISO 512位读/写非接触式识别装 512 bit Read/Write Contactless Identification Device 512位读/写非接触式识别装 From old datasheet system
|
Electronic Theatre Controls, Inc. ETC
|
S29CD032G S29CD032G0JFAI000 S29CD032G0JFAI002 S29C |
CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY From old datasheet system 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
SPANSION[SPANSION]
|
AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49 |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
|
Atmel
|
S29JL064H S29JL064H70TAI000 S29JL064H70TAI002 S29J |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
|
SPANSION[SPANSION]
|
UPD4218165L UPD42S18165L |
3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
|
NEC Corp.
|